ModelLib Dynamically-Linked SPICE Models
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HV MOS
BSIM3-based High Voltage Compact Model
HiSIM HV
Surface Potential Based HV and LDMOS Compact Model
PSP
Surface Potential-Based MOSFET Model
BSIM3v3.2.4
Industry Standard
Sub-0.13 Micron
MOSFET Model
BSIMMG
Berkeley Common Multi-Gate Transistor Model
BSIM3SOIv3.2
Industry Standard
SOI Model
BSIM4v4
Industry Standard
Sub-0.13 Micron
MOSFET Model
EKV
Low Power
MOSFET Model
HICUM
High Speed
Bipolar Model
HiSIM
Surface Potential-
Based MOSFET Model
Mextram
General Purpose
Bipolar Model
Mosvar
PSP-Based MOS
Varactor Model
UOTFT
Universal Organic TFT Model
VBIC
Advanced BJT and HBT Model
ModelLib
Latest ModelLib Models
Dedicated Lateral PNP Model
The MODEL-LAteral model developed by Philips N.V. provides an accurate model dedicated to lateral PNP devices.
This model is based on a totally new approach, accounting for the complex
bi-dimensional structure of lateral transistors. Modella allows the simulation
of lateral devices using real physically based parameters, instead of using
less accurate empirically-modified models, such as Gummel-Poon.
With Modella, lateral PNP bipolars do not lack an accurate model anymore.

Influence of excess-phase on current gain
Ic vs. Vce characteristic
Major Improvements
Modella benefits from the following improvements with regard to the older Gummel-Poon model:
Physically-Based Lateral Bipolar Model
Modella accounts for the bi-dimensional structure of lateral PNP devices, modeling physical effects such as:
Simucad Implementation
Rev. 101807_03
More about Modella: