ModelLib Dynamically-Linked SPICE Models
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HiSIM HV
Surface Potential Based HV and LDMOS Compact Model
PSP
Surface Potential-Based MOSFET Model
BSIM3v3.2.4
Industry Standard
Sub-0.13 Micron
MOSFET Model
BSIMMG
Berkeley Common Multi-Gate Transistor Model
BSIM3SOIv3.2
Industry Standard
SOI Model
BSIM4v4
Industry Standard
Sub-0.13 Micron
MOSFET Model
EKV
Low Power
MOSFET Model
HICUM
High Speed
Bipolar Model
HiSIM
Surface Potential-
Based MOSFET Model
Mextram
General Purpose
Bipolar Model
Modella
Lateral PNP
Bipolar Model
Mosvar
PSP-Based MOS
Varactor Model
UOTFT
Universal Organic TFT Model
VBIC
Advanced BJT and HBT Model
Accurate SPICE Simulation of High Voltage Devices without using macro-models
Simucad Level 88 provides a high-voltage compact model and is an extension of the industry standard BSIM3v3 model. This model is suitable to simulate Vertical Double-diffused (VDMOS) and any other high-voltage MOS devices.
Features
Level 88 improves on the widely adopted BSIM3v3 model to correctly describe,
in a single compact model, the behavior of
high voltage MOS transistors. Being a compact model, Level 88 provides much
better convergence properties as compared to using a macro-model based approach.
Simulation speed is not hampered by increased circuit size as internal macro-model
nodes are not required.
Simucad Implementation
Benefits From Simucad Model Improvements
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Typical best model fit using BSIM3v3 (top) and Level
88 (bottom) showing bias dependency of velocity saturation. |
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Typical best model fit using BSIM3v3 (top) and Level
88 (bottom) showing self-heating effects. |
Additional model parameters added to the core model

Rev. 101807_02
More about HV MOS:
Brochure (PDF)