HV MOS
BSIM3-based High Voltage Compact Model
Other ModelLib Models:
ModelLib Dynamically-Linked SPICE Models
(106k PDF)
HiSIM HV
Surface Potential Based HV and LDMOS Compact Model
PSP
Surface Potential-Based MOSFET Model
BSIM3v3.2.4
Industry Standard
Sub-0.13 Micron
MOSFET Model
BSIM3SOIv3.2
Industry Standard
SOI Model
BSIM4v4
Industry Standard
Sub-0.13 Micron
MOSFET Model
EKV
Low Power
MOSFET Model
HICUM
High Speed
Bipolar Model
HiSIM
Surface Potential-
Based MOSFET Model
Mextram
General Purpose
Bipolar Model
Modella
Lateral PNP
Bipolar Model
Mosvar
PSP-Based MOS
Varactor Model
UOTFT
Universal Organic TFT Model
VBIC
Advanced BJT and HBT Model
Accurate SPICE Simulation of High Voltage Devices without using macro-models
Simucad Level 88 provides a high-voltage compact model and is an extension of the industry standard BSIM3v3 model. This model is suitable to simulate Vertical Double-diffused (VDMOS) and any other high-voltage MOS devices.
Features
- Asymmetric source and drain parasitics
- Bias dependency of source and drain parasitics
- Mobility reduction, including reduction due to drain
voltage
- Dependency of velocity saturation on both gate and drain
voltages
- Self-heating
- Quasi-saturation
- Velocity saturation
- Drain-Induced Barrier Lowering (DIBL)
- Static feedback
- Channel length modulation
- Weak avalanche current
Level 88 improves on the widely adopted BSIM3v3 model to correctly describe,
in a single compact model, the behavior of
high voltage MOS transistors. Being a compact model, Level 88 provides much
better convergence properties as compared to using a macro-model based approach.
Simulation speed is not hampered by increased circuit size as internal macro-model
nodes are not required.
Simucad Implementation
- Level 88 model is part of SmartLib product-independent models library. It can be accessed within SmartSpice as LEVEL 88
- Level 88 is compatible with parallel architecture algorithms
- Level 88 is compatible with VZERO and BYPASS options in order to achieve greater speed performance
- Internal warnings and diagnostics provide valuable information to help identify convergence issues
- Usual MOS device variables like currents, conductances, charges and capacitances as well as MOS Level 88-specific internal variables can be saved, printed, plotted and/or measured
Benefits From Simucad Model Improvements
- Core parameter set is based on a final version of BSIM3v3.2 and ensures good continuity in the drain current equation and stable convergence
- Easy parameter extractions for modeling engineers who are familiar with BSIM3v3.2
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Typical best model fit using BSIM3v3 (top) and Level
88 (bottom) showing bias dependency of velocity saturation. |
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Typical best model fit using BSIM3v3 (top) and Level
88 (bottom) showing self-heating effects. |
Additional model parameters added to the core model

Rev. 101807_02





More about HV MOS:
Brochure (PDF)